Low temperature solution-processed IGZO thin-film transistors

Publication date: 15 October 2018
Source:Applied Surface Science, Volume 455
Author(s): Wangying Xu, Luyao Hu, Chun Zhao, Lingjiao Zhang, Deliang Zhu, Peijiang Cao, Wenjun Liu, Shun Han, Xinke Liu, Fang Jia, Yuxiang Zeng, Youming Lu
We reported the low-temperature high performance IGZO TFTs by solution processing. The influence of IGZO composition over broad range on thin films and devices properties were investigated by a wide range of characterization techniques. The schematic of TFT solution-processed IGZO TFTs mobility with different compositions has been obtained. In order to achieve decent TFT performance, the In content should be much high for solution-processed IGZO TFTs. The optimal solution-processed IGZO TFTs with In:Ga:Zn = 5:1:1 composition exhibited a large mobility of 9.1 cm² V⁻¹ s⁻¹, low subthreshold swing of 0.22 V/decade, and high on/off ratio of 10⁶ at 300 °C processing temperature.



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