Publication date: Available online 12 February 2017
Source:Data in Brief
Author(s): Md. Asaduzzaman, Ali Newaz Bahar, Mohammad Maksudur Rahman Bhuiyan
The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG) substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage (Voc), short circuit current density Jsc, fill factor (FF), efficiency (η), and collection efficiency ηc have been analyzed.
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Medicine by Alexandros G. Sfakianakis,Anapafseos 5 Agios Nikolaos 72100 Crete Greece,00302841026182,00306932607174,alsfakia@gmail.com,
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Κυριακή 12 Φεβρουαρίου 2017
Dataset demonstrating the modeling of a high performance Cu(In,Ga)Se2 absorber based thin film photovoltaic cell
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