Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds

Publication date: 15 May 2017
Source:Materials & Design, Volume 122
Author(s): S. Erfanifam, S.M. Mohseni, L. Jamilpanah, M. Mohammadbeigi, P. Sangpour, S.A. Hosseini, A. Iraji Zad
We report on the MoS2 and MoOx (x=2 and 3) composite thin layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate. Our results show a change in relative content of these compounds in different thicknesses ranging from ∼20 to 540nm. This change in the relative content at different thicknesses leads to a change in optical and electrical properties including bandgap and the type of semiconductivity. A sharp transition from p to n-type of semiconductivity is observed by scanning tunneling spectroscopy measurements. We find that the spin-orbit interaction of Mo 3d electrons in the MoS2 and MoO3 enhances by significant reduction of the MoO3 content in thicker layers.

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