Publication date: October 2017
Source:Data in Brief, Volume 14
Author(s): Md. Billal Hosen, Ali Newaz Bahar, Md. Karamot Ali, Md. Asaduzzaman
This article represents the baseline data of the several semiconductor materials used in the model of a CIGS thin film solar cell with an inclusion of ZnS buffer layer. As well, input parameters, contact layer data and operating conditions for CIGS solar cell simulation with ZnS buffer layer have been described. The schematic diagram of photovoltaic solar cell has been depicted. Moreover, the most important performance measurement graph, J-V characteristic curve, resulting from CIGS solar cell simulation has been analyzed to estimate the optimum values of fill factor and cell efficiency. These optimum results have been obtained from the open circuit voltage, short circuit current density, and the maximum points of voltage and current density generated from the cell.
http://ift.tt/2ufWmoP
Medicine by Alexandros G. Sfakianakis,Anapafseos 5 Agios Nikolaos 72100 Crete Greece,00302841026182,00306932607174,alsfakia@gmail.com,
Ετικέτες
Τρίτη 1 Αυγούστου 2017
Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer
Εγγραφή σε:
Σχόλια ανάρτησης (Atom)
-
Summary Insulinomas are rare neuroendocrine tumours that classically present with fasting hypoglycaemia. This case report discusses an un...
-
The online platform for Taylor & Francis Online content New for Canadian Journal of Remote Sen...
Δεν υπάρχουν σχόλια:
Δημοσίευση σχολίου