Transparent In-Ga-Zn-O field effect glucose sensors fabricated directly on highly curved substrates

Publication date: 1 September 2018
Source:Sensors and Actuators B: Chemical, Volume 268
Author(s): Xiaosong Du, Gregory S. Herman
Fully transparent electronics are of increasing interest for biological applications, where the combination of sensing and imaging can potentially improve patient healthcare diagnostics. Herein, we report high-performance, fully-transparent amorphous In-Ga-Zn-O field-effect transistor (a-IGZO FET) based biosensors fabricated directly on highly-curved glass substrates. The a-IGZO channel and indium tin oxide electrodes were patterned directly on glass tubes (1.0 mm radius) by microcontact printing self-assembled monolayers and etching the metal oxide films. This approach led to a-IGZO FETs with excellent electronic performance, with high on/off drain current ∼1.3 × 10⁶, high average electron mobility > 7.4 cm²/Vs, low on/off hysteresis ∼0.6, V and low gate leakage current ∼10⁻¹⁰ A. The back-channel of the a-IGZO FETs were functionalized with glucose oxidase to make fully transparent biosensors with very high sensitivity to glucose. We have determined that the glucose limit of detection is 170 μM. These results provide insight into new methods for fabricating a-IGZO FETs and a-IGZO FET biosensors on non-planar substrates, and may open a range of new applications, including transparent sensing catheters, flexible active transparent electrode sensing arrays, and integration of FET based biosensors on optical fibers.

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